Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.

Si0.48Ge0.52/Si tip/nanowire heterostructures were grown by pulsed laser vaporization (PLV) at a growth temperature of 1100 degrees C. Ge diffusion in [111]-growth Si nanowires was studied for different post-synthesis annealing temperatures from 200 degrees C to 800 degrees C. Ge composition profiles were quantified by energy-dispersive X-ray spectroscopy in a transmission electron microscope. ...

Dissolution of amorphous silicon into solid aluminum

Metal films are known to dissolve crystalline semiconductors at temperatures well below the eutectic temperature. Dissolution and transport of common semiconductors in contact with Au films have been demonstrated at room temperature. 1 The solid AI metallization used in electronic devices is known to dissolve troublesome quantities of crystalline Si after heat treatment at 400oC.2 Metal films a...

Viscosity and elastic constants of amorphous Si and Ge

The biaxial modulus and coefficient of thermal expansion of ion-beam-sputtered amorphous Si and Ge thin films were determined from curvature changes induced by differential thermal expansion. Viscous flow was measured by stress relaxation and was found to be Newtonian. The viscosity increased linearly with time as a result of structural relaxation, and its isoconfigurational activation enthalpy...

Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

About Non-Fickian Hyperbolic Diffusion

Fick’s law expresses the proportionality of solute flux with respect to concentration gradient. Similar relations are Darcy’s law for the fluid flow in porous media, Ohm’s law for the electric flux and Fourier’s law for heat transfers. When introduced in the corresponding balance equations, these flux laws yield diffusion equations of parabolic character. Different attempts have been made to ob...